NUP4201MR6
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
V RWM
V BR
I R
V C
V C
I PP
(Note 2)
I T =1 mA, (Note 3)
V RWM = 5 V
I PP = 5 A (Note 4)
I PP = 8 A (Note 4)
8x20 m s Waveform (Note 4)
6.0
5.0
5.0
12.5
20
25
V
V
m A
V
V
A
Junction Capacitance
Junction Capacitance
C J
C J
V R = 0 V, f=1 MHz between I/O Pins and GND
V R = 0 V, f=1 MHz between I/O Pins
3.0
1.5
5.0
3.0
pF
pF
Clamping Voltage
Clamping Voltage
V C
V C
@ I PP = 1 A (Notes 5 and 6)
Per IEC 61000 ? 4 ? 2 (Note 7)
Figure 1 and 2
16.6
V
V
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Non ? repetitive current pulse per Figure 5 (Pin 5 to Pin 2)
5. Non ? repetitive current pulse per FIgure 5 (Any I/O Pins)
6. Surge current waveform per Figure 5.
7. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
相关PDF资料
NUP4202W1T2G IC TVS ARRAY HS DATALINE SOT-363
NUP4212UPMUTAG TVS QUAD ARRAY LOW CAP 6-UDFN
NUP4302MR6T1 IC DIODE ARRAY SCHOTTKY TSOP6
NUP4304MR6T1 IC DIODE ARRAY LO CAP ESD SC74-6
NUP45V6P5T5G TVS QUAD ARRAY LOW CAP SOT-953
NUP46V8P5T5G TVS QUAD ARRAY LOW CAP SOT-953
NUP5120X6T2G IC TVS ARRAY 5LINE SOT-563
NUP5150MUTBG IC TVS ARRAY 5LINE ESD 6-UDFN
相关代理商/技术参数
NUP4201MR6T1G 功能描述:TVS二极管阵列 Low Cap. TVS Array Hi Spd Data Protect RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4201MR6T1G 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 500W 5V TSOP 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY, 500W, 5V, TSOP
NUP4201MR6T1G-CUT TAPE 制造商:ON 功能描述:NUP4201MR6 Series 6 V 500 W Unidirectional Transient Voltage Suppressor
NUP4202 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic
NUP4202W1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4202W1_09 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors
NUP4202W1T2G 功能描述:TVS二极管阵列 LOW CAP DIODE TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
NUP4212UPMU 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Quad Transient Voltage Suppressor Array